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Gate turn-off thyristors (GTO)

Gate turn-off thyristors (GTO)

Production of GTOs commenced in the mid 1980s. A GTO is a thyristor that can be turned off by applying a current to the gate in the reverse direction to that required to turn it on.


GTOs are optimized for low conduction losses. The typical on-off switching frequency is in the range of 200 - 500 hertz for most applications. GTOs are, by nature, relatively slow switches.
Typical transition times from on to off state and vice versa are in a range of 10 - 30 microseconds. All GTOs require protective networks called "snubbers" for turn-on and turn-off. The turn-on snubber circuit, in essence an inductor, limits the rate of current rise. For turn-off, the GTO requires a device that limits the rate of voltage rise, in essence a capacitor.
All ABB GTOs are press-pack devices. They are pressed with a relatively high force onto heat-sinks which also serve as electrical contacts to the power terminals.

Asymmetric GTOs are divided in two categories: Buffer layer and Standard. Buffer layer GTOs have exceptionally low on-state and dynamic losses. Fine pattern types (5SGF) are optimised for fast switching and transparent emitter (5SGT) for low on-state losses. The Standard GTOs have excellent trade-off between on-state and switching losses.

Part NumberVDRM (V)VDC (V)ITGQM  @  Cs(A)ITGQM  @  Cs(µF)Package* (mm)
Standard
250014001500375/47
250014002000493/63
250014002500693/63
2500140030005108/75
45002800600158/34
450022002000493/63
4500280030006108/75
4500280040006120/85

*Note: Pole-piece diameter / Housing height
 

Part NumberVDRM (V)VDC (V)ITGQM @
Cs (A)
ITGQM @ Cs(µF)Package* (mm)
Buffer layer
4500300030003108/75
4500280040006120/85

*Note: Pole-piece diameter / Housing height